Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4559, MOSFET

April 2002

2000 Fairchild Semiconductor Corporation

FDS4559 Rev C1(W)

FDS4559

60V Complementary PowerTrench







MOSFET

General Description

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Power management

• LCD backlight inverter

Features

• Q1: N-Channel

4.5 A, 60 V R

DS(on)

= 55 mΩ @ V

= 10V

DS(on)

= 75 mΩ @ V

= 4.5V

• Q2: P-Channel

–3.5 A, –60 V R

DS(on)

= 105 mΩ @ V

= –10V

DS(on)

= 135 mΩ @ V

= –4.5V

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

DSS

Drain-Source Voltage 60 –60 V

GSS

Gate-Source Voltage

±20 ±20

Drain Current - Continuous (Note 1a) 4.5 –3.5 A

- Pulsed 20 –20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range -55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4559 FDS4559 13” 12mm 2500 units

FDS4559

Summary of content (8 pages)

PAGE 1
FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel RDS(on) = 55 mΩ @ VGS = 10V 4.5 A, 60 V RDS(on) = 75 mΩ @ VGS = 4.5V • Applications Q2: P-Channel –3.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 30 V, ID = 4.5 A Q1 90 mJ Q1 4.
PAGE 3
Symbol Parameter (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = –1.3 A (Note 2) Q1 Q2 Q1 Q2 0.8 –0.8 1.3 –1.3 1.2 –1.2 A V Notes: 1.
PAGE 4
FDS4559 Typical Characteristics: Q2 1.8 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -4.5V -4.0V -5.0V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V 0 -10V 1 2 3 4 0 5 2 4 6 8 10 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.4 ID = -3.5A VGS = -10V 1.
PAGE 5
FDS4559 Typical Characteristics: Q2 1200 VDS = 10V ID = -3.0A 20V f = 1 MHz V GS = 0 V 1000 8 30V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 800 C ISS 600 400 2 200 C OSS C RSS 0 0 0 4 8 12 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics.
PAGE 6
FDS4559 Typical Characteristics: Q1 1.8 VGS = 10V 6.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 20 4.5V 5.0V 4.0V 12 8 3.5V 4 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 8.0V 0.8 0 0 1 2 3 0 4 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 2.2 ID = 2.3A ID = 4.
PAGE 7
FDS4559 Typical Characteristics: Q1 ID = 4.5A 900 VDS = 10V 8 30V f = 1MHz VGS = 0 V 800 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 700 CISS 600 500 400 300 200 COSS 100 0 CRSS 0 0 2 4 6 8 10 12 14 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
PAGE 8
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