Datasheet

©2007 Fairchild Semiconductor Corporation
FDS4672A
Rev C1 (W)
FDS4672A
40V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Features
11 A, 40 V. R
DS(ON)
= 13 mΩ @ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (35 nC typical)
High power and current handling capability
RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 40 V
V
GSS
Gate-Source Voltage
±12
V
I
D
Drain Current – Continuous (Note 1a) 11 A
Pulsed 50
E
AS
Single Pulse Avalanche Energy (Note
3) 181
mJ
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.4
P
D
(Note 1c)
1.2
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4672A FDS4672A 13’’ 12mm 2500 units
FDS4672A
tm
February 2007

Summary of content (6 pages)