Datasheet

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FDS4675_F085

40V P-Channel PowerTrench



MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –11 A, –40 V R

DS(ON)

= 0.013 Ω @ V

= –10 V

DS(ON)

= 0.017 Ω @ V

= –4.5 V

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage

–40

GSS

Gate-Source Voltage ±20 V

Drain Current – Continuous (Note 1a)

–11

– Pulsed

–50

Power Dissipation for Single Operation (Note 1a) 2.4 (steady state)

(Note 1b)

1.4

(Note 1c)

1.2

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec)

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1c) 125

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4675 FDS4675_F085 13’’ 12mm 2500 units

June 2013

FDS4675_F085 P-Channel PowerTrench

MOSFET

FDS4675_F085 Rev. C1

www.fairchildsemi.com1

• Qualified to AEC Q101

• RoHS Compliant

Summary of content (5 pages)

PAGE 1
tm FDS4675_F085 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). • –11 A, –40 V RDS(ON) = 0.013 Ω @ V GS = –10 V RDS(ON) = 0.017 Ω @ V GS = –4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –32 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V V DS = 0 V –100 nA –3 V On Characteristics –40 ID = –250 µA, Referenced to 25°C V –
PAGE 3
VGS = -10V 40 2.2 -3.5V -6.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 50 -3.0V 30 20 -2.5V 10 0 0 0.5 1 1.5 2 2.5 2 1.8 VGS = -3.0V 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 3 0 10 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -25 0 25 50 75 100 125 ID = -5.5A 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 150 2 2.
PAGE 4
6000 VDS = -10V ID = -11A -20V 4 f = 1 MHz VGS = 0 V 5000 -30V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 4000 3000 2000 1000 0 0 10 20 30 40 C OSS C RSS 0 50 0 10 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 1ms 10ms 100ms 10s 1 1s DC VGS = -4.5V SINGLE PULSE o Rθ JA = 125 C/W 0.1 o T A = 25 C 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.
PAGE 5
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.