Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4935A, MOSFET

March 2002

2002 Fairchild Semiconductor Corporation

FDS4935A Rev A(W)

FDS4935A

Dual 30V P-Channel PowerTrench







MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –7 A, –30 V R

DS(ON)

= 23 mΩ @ V

= –10 V

DS(ON)

= 35 mΩ @ V

= –4.5 V

• Low gate charge (15nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) –7 A

– Pulsed –30

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4935A FDS4935A 13’’ 12mm 2500 units

FDS4935A

Summary of content (5 pages)

PAGE 1
FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). • –7 A, –30 V Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –10 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = –20 V, VGS = 20 V, VDS = 0 V VDS = 0 V –100 100 nA nA –3 V On Characteristics ID = –250 µA, Referenced to 25°C –24 mV/°C
PAGE 3
FDS4935A Typical Characteristics 50 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 2.4 -5.0V -4.5V -6.0V 40 -4.0V 30 -3.5V 20 -3.0V 10 0 2.2 VGS = -3.5V 2 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -10V 1 0.8 0 1 2 3 4 5 0 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.08 ID = -7A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2.
PAGE 4
FDS4935A Typical Characteristics 2000 VDS = -5V ID = -8.8A f = 1 MHz VGS = 0 V 1800 -10V 8 1600 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 1400 CISS 1200 1000 2 800 600 400 COSS 200 0 CRSS 0 0 4 8 12 16 20 24 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics.
PAGE 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.