Datasheet

2006 Fairchild Semiconductor Corporation
FDS4935BZ Rev B1 (W)
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench

MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
x –6.9 A, –30 V. R
DS(ON)
= 22 m: @ V
GS
= –10 V
R
DS(ON)
= 35 m: @ V
GS
= – 4.5 V
x Extended V
GSS
range (–25V) for battery applications
x ESD protection diode (note 3)
x High performance trench technology for extremely
low R
DS(ON)
x High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DS\
Drain-Source Voltage –30 V
V
GS
Gate-Source Voltage +25 V
I
D
Drain Current – Continuous (Note 1a) –6.9 A
– Pulsed –50
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1.0
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
qC/W
R
TJC
Thermal Resistance, Junction-to-Case
(Note 1) 40
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units
4
3
2
1
5
6
7
8
Q1
Q2
FDS4935BZ
tm
September 2006