Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS5351, MOSFET

April 2008

FDS5351 Rev.C

www.fairchildsemi.com

FDS5351 N-Channel PowerTrench

MOSFET

FDS5351

N-Channel PowerTrench

MOSFET

60V, 6.1A, 35mΩ

Features

 Max r

DS(on)

= 35mΩ at V

= 10V, I

= 6.1A

 Max r

DS(on)

= 42mΩ at V

= 4.5V, I

= 5.5A

 High performance trench technology for extremely low r

DS(on)

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 Inverter Switch

 Synchronous Rectifier

 Load Switch

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 6.1

-Pulsed 30

Single Pulse Avalanche Energy (Note 3) 73 mJ

Power Dissipation T

= 25°C (Note 1a) 5

Power Dissipation T

= 25°C (Note 1b) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS5351 FDS5351 SO-8 13’’ 12mm 2500units

SO-8

Pin 1

Summary of content (6 pages)

PAGE 1
FDS5351 N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ Features General Description Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 60 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
.0 VGS = 10V VGS = 4V VGS = 4.5V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = 3.5V 10 VGS = 3V 0 0 1 2 VGS = 3V VGS = 3.5V 2.5 VGS = 4V 2.0 1.5 VGS = 4.5V 1.0 0.5 0 3 10 Figure 1. On-Region Characteristics 100 ID = 6.1A VGS = 10V 1.8 ID = 6.1A rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2.
PAGE 4
000 ID = 6.1A Ciss 8 1000 VDD = 30V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 20V VDD = 40V 4 Coss 100 Crss 2 f = 1MHz VGS = 0V 0 0 4 8 12 16 10 0.1 20 1 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 8 6 TJ = 25oC 4 TJ = 125oC 8 VGS = 10V 6 VGS = 4.5V 4 2 2 o RθJA = 50 C/W 1 0.01 0.1 1 10 0 25 30 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS5351 Rev.C 5 www.fairchildsemi.
PAGE 6
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