Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS5680, MOSFET

FDS5680

FDS5680 Rev. C

FDS5680

60V N-Channel PowerTrench

MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Applications

 DC/DC converter

 Load switch

 Motor drives

July 1999

Features

 8 A, 60 V. R

DS(ON)

= 0.020 Ω @ V

= 10 V

DS(ON)

= 0.025 Ω @ V

= 6 V.

 Low gate charge (30nC typical).

 Fast switching speed.

 High performance trench technology for extremely

low R

DS(ON)

 High power and current handling capability.

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage

±20

Drain Current - Continuous (Note 1a) 8A

- Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5 W

(Note 1b)

1.2

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS5680 FDS5680 13’’ 12mm 2500 units

SO-8

Summary of content (5 pages)

PAGE 1
FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications 8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V On Characteristics 60 V
PAGE 3
FDS5680 Typical Characteristics VGS =10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 50 6.0V ID, DRAIN CURRENT (A) 5.0V 40 7.0V 4.5V 30 20 4.0 10 2.1 VGS=4.0V 1.8 1.5 4.5 5.0V 1.2 6.0V 7.0V 0.9 0.6 0 0 0.5 1 1.5 2 2.5 0 3 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0.06 1.6 ID= 8.0A VGS= 10V ID = 4.0A RDS(ON), ON RESISTANCE ( Ω ) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1.
PAGE 4
(continued) 2500 10 ID=8.0A VDS= 12V 8 2000 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS5680 Typical Characteristics 24V 48V 6 4 Ciss 1500 1000 2 500 0 0 Coss 0 7 14 21 28 35 Crss 0 6 Qg, GATE CHARGE (nC) 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 100µs RDS(ON) Limit SINGLE PULSE 10 POWER (W) 1 o T =25 C 1ms 10ms 100ms 1s 10s DC 30 20 0.1 10 0.01 0 0.1 1 10 100 0.
PAGE 5
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