Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS5690, MOSFET

FDS5690

FDS5690 Rev. C

FDS5690

60V N-Channel PowerTrench





MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Applications

• DC/DC converter

• Motor drives

March 2000

Features

•

7 A, 60 V. R

DS(on)

= 0.028 Ω @ V

= 10 V

DS(on)

= 0.033 Ω @ V

= 6 V.

• Low gate charge (23nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability.

 2000 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage

20 V

Drain Current - Continuous

(Note 1a)

- Pulsed 50

Power Dissipation for Single Operation

(Note 1a)

2.5 W

(Note 1b)

1.2

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS5690 FDS5690 13’’ 12mm 2500 units

SO-8

Summary of content (5 pages)

PAGE 1
FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. • Low gate charge (23nC typical).
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C 60 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V On Characteristics V m
PAGE 3
FDS5690 Typical Characteristics 50 2 VGS = 10V 6.0V 40 1.8 5.0V 1.6 4.5V 30 VGS = 4.0V 4.5V 1.4 5.0V 20 1.2 4.0V 6.0V 7.0V 10V 10 1 3.5V 0.8 0 0 1 2 3 4 5 0 6 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 2 0.07 ID = 7A VGS = 10V 1.8 ID = 3.5A 0.06 1.6 0.05 1.4 o TA = 125 C 0.04 1.2 0.03 1 0.8 0.02 0.6 0.01 0.
PAGE 4
FDS5690 Typical Characteristics (continued) 10 1600 f = 1MHz VGS = 0 V ID = 7A VDS = 10V 20V 8 30V 1200 CISS 6 800 4 400 2 COSS CRSS 0 0 0 5 10 15 20 25 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE o 100µs 1ms RDS(ON) LIMIT 10 POWER (W) 10ms 10s DC VGS = 10V SINGLE PULSE 0.
PAGE 5
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