Datasheet

2007 Fairchild Semiconductor Corporation
FDS6294 Rev D1 (W)
FDS6294
30V N-Channel Fast Switching PowerTrench


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MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 13 A, 30 V. R
DS(ON)
= 11.3 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14.4 mΩ @ V
GS
= 4.5 V
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
• RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current – Continuous (Note 1a) 13 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 3.0
P
D
(Note 1b)
1.2
W
E
AS
Single Pulse Avalanche Energy (Note 3) 181
mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 125
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6294 FDS6294 13’’ 12mm 2500 units
FDS6294
tm
February 2007