Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6298, MOSFET

2007 Fairchild Semiconductor Corporation

DS6298 Rev. C1 ( W)

FDS6298

30V N-Channel Fast Switching PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

 Control Switch for DC-DC Buck converters

 Notebook Vcore

 Telecom / Networking Point of Load

Features

 13 A, 30 V. R

DS(ON)

= 9 mΩ @ V

= 10 V

DS(ON)

= 12 mΩ @ V

= 4.5 V

 Low gate charge (10nC @ V

=5V)

 Very low Miller Charge (3nC)

 Low Rg (1 Ohm)

 ROHS Compliant

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol

Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous

(Note 1a)

– Pulsed 50

Power Dissipation for Single Operation

(Note 1a)

3.0

Power Dissipation for Single Operation

(Note 1b)

1.2

Single Pulse Avalanche Energy

(Note 3)

181

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

125

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6298 FDS6298 13’’ 12mm 2500 units

FDS6298

30V N

Channel Fast Switching PowerTrench



MOSFE

April 2007

Summary of content (6 pages)

PAGE 1
FDS6298 tm  30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Low gate charge (10nC @ VGS=5V) Applications Very low Miller Charge (3nC) 13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage On Characteristics VGS = 0 V, ID = 250 µA 30 - - V ID = 250 µA, Referenced to 25°C - 30 - mV/°C VDS = 24 V, VGS = 0 V - - 1 µA VGS = ±20 V, VDS = 0 V - - ±100 nA VDS = VGS, ID = 250 µA 1 1.
PAGE 3
2.6 VGS = 10V ID, DRAIN CURRENT (A) 70 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 80 6.0V 60 3.5.V 50 40 30 3.0V 20 10 2.4 VGS = 3.0V 2.2 2 1.8 3.5V 1.6 4.0V 1.4 4.5V 0 0.5 1 1.5 2 0 2.5 10 20 10V 30 40 50 60 70 80 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.028 1.8 ID = 13A VGS = 10V 1.6 ID = 6.
PAGE 4
1500 ID = 13A VDS = 10V 8 1200 20V 6 4 2 900 600 COSS 300 0 CRSS 0 0 4 8 12 16 20 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100 RDS(ON) LIMIT 10 1 100µs IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.
PAGE 5
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6298 Rev.
PAGE 6
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