Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6375, MOSFET

September 2001

2001 Fairchild Semiconductor Corporation FDS6375 Rev E(W)

FDS6375

P-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 8V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –8 A, –20 V. R

DS(ON)

= 24 mΩ @ V

= –4.5 V

DS(ON)

= 32 mΩ @ V

= –2.5 V

• Low gate charge (26 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• High current and power handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage ±8 V

Drain Current – Continuous (Note 1a) –8 A

– Pulsed –50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1c) 125

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6375 FDS6375 13’’ 12mm 2500 units

FDS6375

Summary of content (5 pages)

PAGE 1
FDS6375 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). • –8 A, –20 V. RDS(ON) = 24 mΩ @ V GS = –4.5 V RDS(ON) = 32 mΩ @ V GS = –2.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.
PAGE 3
FDS6375 Typical Characteristics 50 2.2 -2.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V -I D, DRAIN CURRENT (A) 40 -2.0V 30 20 -1.5V 10 0 0.5 1 1.5 2 2.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) 3 1.6 1.4 -2.5V -3.0V 1.2 -3.5V -4.5V 1 3.5 0 Figure 1. On-Region Characteristics. 10 20 30 -ID , DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.055 ID = -8A VGS = - 4.
PAGE 4
FDS6375 Typical Characteristics 4000 ID = -8A V DS = -5V f = 1 MHz VGS = 0 V -10V 4 3200 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 C ISS 2400 1600 1 COSS 800 CRSS 0 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 30 0 Figure 7. Gate Charge Characteristics. 20 Figure 8. Capacitance Characteristics. 100 50 R DS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µ 1ms -I D, DRAIN CURRENT (A) 5 10 15 -V DS , DRAIN TO SOURCE VOLTAGE (V) 10 10ms 100ms 1s 10s DC 1 V GS = -4.
PAGE 5
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