Datasheet

FDS6570A
FDS6570A Rev. C
FDS6570A
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Battery protection
March 2000
Features
15 A, 20 V. R
DS(on)
= 0.0075 @ V
GS
= 4.5 V
R
DS(on)
= 0.010 @ V
GS
= 2.5 V.
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter FDS6570A Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
8V
I
D
Drain Current - Continuous
(Note 1a)
15 A
- Pulsed 50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5 W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6570A FDS6570A 13’’ 12mm 2500 units
6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G

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