Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6574A, MOSFET

2008 Fairchild Semiconductor Corporation

FDS6574A Rev B2(W)

FDS6574A

20V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

• DC/DC converter

Features

• 16 A, 20 V. R

DS(ON)

= 6 mΩ @ V

= 4.5 V

DS(ON)

= 7 mΩ @ V

= 2.5 V

DS(ON)

= 9 mΩ @ V

= 1.8 V

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

± 8

Drain Current – Continuous (Note 1a) 16 A

– Pulsed 80

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6574A FDS6574A 13’’ 12mm 2500 units

FDS6574A

tmM

May 2008

• RoHS Compliant

Summary of content (5 pages)

PAGE 1
FDS6574A May 2008 FDS6574A tmM 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA ID = 250 µA 1.
PAGE 3
FDS6574A Typical Characteristics 2 VGS = 4.5V 2.5V ID, DRAIN CURRENT (A) 3.5V 80 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 100 1.8V 1.5V 60 40 20 0 0 0.5 1 1.5 1.8 VGS = 1.5V 1.6 1.4 1.8V 1.2 2.5V 0 20 40 60 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 ID = 16A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.
PAGE 4
FDS6574A Typical Characteristics 10000 VDS = 5V ID = 16 A 10V 4 15V 3 2 6000 4000 COSS 1 2000 0 0 CRSS 0 15 30 45 60 75 90 0 Qg, GATE CHARGE (nC) 5 10 20 Figure 8. Capacitance Characteristics. 50 100 100µs RDS(ON) LIMIT 10 1 DC VGS = 4.5V SINGLE PULSE RθJA = 125oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) 1000 1ms 10ms 100ms 1s 10s TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.
PAGE 5
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