Datasheet
FDS6576 P-Channel 2.5V Specified PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDS6576 Rev E3
FDS6576
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench
®
®
process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
•
Load switch
• Battery protection
• Power management
Features
–11 A, –20 V. R
DS(ON)
= 0.014 :@ V
GS
= –4.5 V
R
DS(ON)
= 0.020 :@ V
GS
= –2.5 V
• Extended V
GSS
range (r12V) for battery applications.
•
Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
• RoHS Compliant.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
r 12
V
I
D
Drain Current – Continuous (Note 1a) –11 A
– Pulsed –50
Power Dissipation for Single Operation
(Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
qC/W
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1c) 125
qC/W
R
TJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6576 FDS6576 13’’ 12mm 2500 units
tm
December 2006