Datasheet
2007 Fairchild Semiconductor Corporation
F
DS6612A Rev D1 (W)
FDS6612A
Single N-Channel, Logic-Level, PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 8.4 A, 30 V. R
DS(ON)
= 22 mΩ @ V
GS
= 10 V
R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol
Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous
(Note 1a)
8.4 A
– Pulsed 40
Power Dissipation for Single Operation
(Note 1a)
2.5
P
D
(Note 1b)
1.0
W
E
AS
Single Pulse Avalanche Energy
(Note 3)
24
mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6612A FDS6612A 13’’ 12mm 2500 units
FDS6612A Single N-Channel, Logic-Level, PowerTrench
MOSFET
tm
April 2007