Datasheet

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FDS6630A

FDS6630A Rev. C1

FDS6630A

N-Channel Logic Level PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor drives

April 1999

Features

• 6.5 A, 30 V. R

DS(on)

= 0.038 Ω @ V

= 10 V

DS(on)

= 0.053 Ω @ V

= 4.5 V

• Low gate charge (5nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability.

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

20 V

Drain Current - Continuous

(Note 1a)

6.5 A

- Pulsed 40

Power Dissipation for Single Operation

(Note 1a)

2.5 W

(Note 1b)

1.2

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS6630A FDS6630A 13’’ 12mm 2500 units

SO-8

Summary of content (5 pages)

PAGE 1
FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Low gate charge (5nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C 30 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics V mV/°C
PAGE 3
FDS6630A Typical Characteristics VGS =10V 35 2.2 6.0V R DS (ON) , NORMALIZ ED 5.0V 30 4.5V 25 4.0V 20 3.5V 15 10 3.0V 5 DRAIN-SO URCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 40 2.5V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 1.8 4.0V 1.6 4.5V 5.0V 1.4 6.0V 1.2 1 0V 0.8 0 20 30 40 ID , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.4 R DS(ON) , ON-RESISTANCE (OHM) I D = 6.5 A VGS = 10 V 1.2 1 0.8 0.
PAGE 4
(continued) 1000 10 I D = 6.5A VD S= 5V C iss 500 8 15V 10V CAPACITANCE (pF) VGS , G ATE-SOURCE VOLTAG E (V) FDS6630A Typical Characteristics 6 4 200 Coss 100 50 2 C rss f = 1 MHz V GS = 0 V 0 0 2 4 6 8 10 0.1 0.2 Qg , GATE CHARGE (nC) 50 100 10 IM 10 0 us 1m s IT 1 0m 10 0 m 1 1s 1 0s DC V GS = 1 0V SINGL E PU LSE RθJ A=125 °C/W TA = 25°C 0.01 0.1 0.3 s s o TA = 25 C 30 20 10 1 3 10 30 VD S , DRAIN-SO URCE VOLTAGE (V) 50 0 0.001 0.01 0.
PAGE 5
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