Datasheet
FDS6670AS
30V N-Channel PowerTrench
SyncFET
™
General Description
The FDS6670AS
is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
13.5 A, 30 V. R
DS(ON)
max= 9.0 m @ V
GS
= 10 V
R
DS(ON)
max= 11.5 m @ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratin
gs Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Volt
age
20
V
I
D
Drain Current – Continuous
(Note 1a) 13.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperatu
re Range –55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1) 25
C/W
Package Marking and Ordering Information
Devi
ce Marking Device Reel Size Tape width Quantity
FDS6670AS FDS6670AS 13’’ 12mm 2500 units
FDS6670AS 30V N-Channel PowerT
rench
®
SyncFET™
RoHS Compliant
©2010 Fairchild
Semiconductor Corporation
FDS6670AS Rev.C1
www.fairchildsemi.com
1
July 2010