Datasheet

FDS6673BZ P-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B2
www.fairchildsemi.com1
FDS6673BZ
P-Channel PowerTrench
®
MOSFET
-30V, -14.5A, 7.8m:
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistan
ce.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
 Max r
DS(on)
= 7.8m:V
GS
= -10V, I
D
= -14.5A
 Max r
DS(on)
= 12m:V
GS
= -4.5V, I
D
= -12A
 Extended V
GS
range (-25V) for battery applications
 HBM ESD protection level of 6.5kV typical (note 3)
 High performance trench technology for extremely low
r
DS(on)
 High power and current handling capability
 RoHS compliant
1
7
5
2
8
4
6
3
S
D
S
S
SO-8
D
D
D
G
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous (Note1a) -14.5 A
-Pulsed -75 A
P
D
Power Dissipation for Single Operation (Note1a) 2.5
W (Note1b) 1.2
(Note1c) 1.0
T
J
, T
STG
Operating and Storage Temperature -55 to 150 °C
R
TJA
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
R
TJC
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Device Marking Device Reel Size Tape Width Quantity
FDS6673BZ FDS6673BZ 13’’ 12mm 2500 units
March 2009