Datasheet

October 1998
FDS6675
Single P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless otherwise noted
Symbol Parameter FDS6675 Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current - Continuous (Note 1a) -11 A
- Pulsed -50
P
D
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
FDS6675 Rev.C
-11 A, -30 V. R
DS(ON)
= 0.014 Ω @ V
GS
= -10 V,
R
DS(ON)
= 0.020 Ω @ V
GS
= -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8 SOT-223
SuperSOT
TM
-6
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
5
6
7
3
1
8
4
2
S
D
S
S
SO-8
D
D
D
G
pin
1
FDS
6675
© 1998 Fairchild Semiconductor Corporation