Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6676AS, MOSFET

DS6676AS Rev B

FDS6676AS

30V N-Channel PowerTrench

SyncFET

™

General Description

The FDS6676AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

DS(ON)

and low gate charge. The FDS6676AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

Features

• 14.5 A, 30 V. R

DS(ON)

max= 6.0 mΩ @ V

= 10 V

DS(ON)

max= 7.25 mΩ @ V

= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (45nC typical)

• High performance trench technology for extremely low

DS(ON)

and fast switching

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 14.5 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6676AS FDS6676AS 13’’ 12mm 2500 units

FDS6676AS 30V N-Channel PowerTrench

SyncFET™

May 2008

• RoHS Compliant

Summary of content (8 pages)

PAGE 1
tm FDS6676AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time IRM Diode Reverse Recovery Current Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 14.5A, diF/dt = 300 A/µs (Note 2) (Note 2) (Note 3) 0.4 0.5 27 0.7 V nS 1.9 A 26 nC Notes: 1.
PAGE 4
50 2.4 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 40 6.0V 4.5V 3.0V 30 20 10 2.5V 0 VGS = 3.0V 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 6.0V 10V 1 0.8 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 1 0 Figure 1. On-Region Characteristics. 20 30 ID, DRAIN CURRENT (A) 40 50 0.016 ID = 7.3 A RDS(ON), ON-RESISTANCE (OHM) ID = 14.5A VGS =10V 1.2 1 0.8 0.6 0.014 0.012 0.01 o TA = 125 C 0.008 0.006 TA = 25oC 0.
PAGE 5
3500 ID = 14.5A f = 1MHz VGS = 0 V 3000 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2500 Ciss 2000 1500 Coss 1000 2 500 Crss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100us 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W 0.1 o TA = 25 C 0.01 0.
PAGE 6
SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 0.8A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6676AS.
PAGE 7
L VDS BVDSS tP VGS RGE + DUT VGS VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Same type as + - + VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON VDS VGS RGEN td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VDD DUT VGSPulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19.
PAGE 8
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