Datasheet

March 2005
©2005 Fairchild Semiconductor Corporation
FDS6679 Rev C1 (W)
FDS6679
30 Volt P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. R
DS(ON)
= 9 mΩ @ V
GS
= –10 V
R
DS(ON)
= 13 mΩ @ V
GS
= – 4.5 V
• Extended V
GSS
range (±25V) for battery applications
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage
±25
V
I
D
Drain Current – Continuous (Note 1a) –13 A
– Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6679 FDS6679 13’’ 12mm 2500 units
FDS6679