Datasheet

tm
March 2009
FDS6679AZ P-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
www.fairchildsemi.com1
FDS6679AZ
P-Channel PowerTrench
®
MOSFET
-30V, -13A, 9mΩ
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
 Max r
DS(on)
= 9.3mΩ at V
GS
= -10V, I
D
= -13A
 Max r
DS(on)
= 14.8mΩ at V
GS
= -4.5V, I
D
= -11A
 Extended V
GS
range (-25V) for battery applications
 HBM ESD protection level of 6kV typical (note 3)
 High performance trench technology for extremely low
r
DS(on)
 High power and current handing capability
 RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
1
7
5
2
8
4
6
3
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous (Note 1a) -13
A
-Pulsed -65
P
D
Power Dissipation for Single Operation (Note 1a) 2.5
W (Note 1b) 1.2
(Note 1c) 1.0
T
J
, T
STG
Operating and Storage Temperature -55 to +150 °C
R
θJA
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
R
θJC
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Device Marking Device Reel Size Tape Width Quantity
FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units