Datasheet

November 2004
©2012 Fairchild Semiconductor Corporation
FDS6680A Rev F2(W)
FDS6680A
Single N-Channel, Logic Level, PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
12.5 A, 30 V R
DS(ON)
= 9.5 m @ V
GS
= 10 V
R
DS(ON)
= 13 m @ V
GS
= 4.5 V
Ultra-low gate charge
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
I
D
Drain Current – Continuous (Note 1a) 12.5 A
Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Case
(Note 1a) 50
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6680A FDS6680A 13’’ 12mm 2500 units
FDS6680A
July 2012

Summary of content (5 pages)