Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6680AS, MOSFET

FDS6680AS Rev B2(X)

FDS6680AS

30V N-Channel PowerTrench

SyncFET

™

General Description

The FDS6680AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

DS(ON)

and low gate charge. The FDS6680AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDS6680AS as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDS6680 in parallel with a Schottky

diode.

Applications

• DC/DC converter

• Low side notebooks

Features

• 11.5 A, 30 V. R

DS(ON)

max= 10.0 mΩ @ V

= 10 V

DS(ON)

max= 12.5 mΩ @ V

= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (22nC typical)

• High performance trench technology for extremely low

DS(ON)

and fast switching

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 11.5 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6680AS FDS6680AS 13’’ 12mm 2500 units

FDS6680AS 30V N-Channel PowerTrench

SyncFET™

May 2008

Summary of content (8 pages)

PAGE 1
FDS6680AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics 30 V 26 ID = 10 mA, Referenced to 25°C mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Vol
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Unit 3.5 A 0.7 V Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time VGS = 0 V, VGS = 0 V, IF = 11.5A, Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs IS = 3.5 A IS = 7 A (Note 2) (Note 2) (Note 3) 0.5 0.6 18 12 nS nC Notes: 1.
PAGE 4
2 50 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 4.0V 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.0V 30 20 2.5V 10 1.6 3.5V 1.4 4.0V 4.5V 1.2 0 6.0V 10.0V 1 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.05 ID = 11.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) ID = 6A 1.2 1 0.8 0.04 0.03 o 0.02 TA = 125 C 0.
PAGE 5
1800 f = 1MHz VGS = 0 V ID =11.5A 1500 VDS = 10V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 1200 Ciss 900 600 Coss 300 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) 1000 RDS(ON) LIMIT 100µs 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 o TA = 25 C 0.01 0.
PAGE 6
SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 3A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6680AS.
PAGE 7
L VDS BVDSS tP VGS RGE + DUT VGS VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18.
PAGE 8
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