Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6681Z, MOSFET

June 2005

FDS6681Z Rev B (W)

FDS6681Z

30 Volt P-Channel PowerTrench

MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that

has been especially tailored to minimize the on-state

resistance.

This device is well suited for Power Management and

load switching applications common in Notebook

Computers and Portable Battery Packs.

Features

• –20 A, –30 V. R

DS(ON)

= 4.6 mΩ @ V

= –10 V

DS(ON)

= 6.5 mΩ @ V

= –4.5 V

• Extended V

GSS

range (–25V) for battery applications

• HBM ESD protection level of 8kV typical (note 3)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

• Termination is Lead-free and RoHS Compliant

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –30 V

GSS

Gate-Source Voltage ±25 V

Drain Current – Continuous (Note 1a) –20 A I

– Pulsed –105

Power Dissipation for Single Operation (Note 1a) 2.5 W

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6681Z FDS6681Z 13’’ 12mm 2500 units

FDS6681Z

Summary of content (6 pages)

PAGE 1
FDS6681Z 30 Volt P-Channel PowerTrench® MOSFET Features General Description • –20 A, –30 V. This P-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process that RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V has been especially tailored to minimize the on-state • Extended VGSS range (–25V) for battery applications resistance.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS ID = –250 µA –30 V Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±10 µA µA –3 V On Characteristics VGS = 0 V, –26 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Thresho
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS (Note 2) tRR Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage IF = –20 A, Reverse Recovery Time QRR Reverse Recovery Charge (Note 2) VSD dIF/dt = 100 A/µs –0.7 –2.1 A –1.2 V 125 ns 94 nC Notes: 1.
PAGE 4
FDS6681Z Typical Characteristics 105 2.4 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 90 -ID, DRAIN CURRENT (A) -6.0V -4.5V 75 -3.5V 60 45 30 -3.0V 15 0 2 1.8 -4.0V 1.6 -4.5V 1.4 -5.0V 1.2 -6.0V -8.0V 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 15 30 45 60 75 -ID, DRAIN CURRENT (A) 90 105 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.
PAGE 5
FDS6681Z Typical Characteristics 10000 f = 1MHz VGS = 0 V ID = -20A 8000 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = -10V 6 -20V 4 -15V Ciss 6000 4000 Coss 2 2000 0 0 Crss 0 40 80 120 Qg, GATE CHARGE (nC) 160 0 200 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC VGS = -10V SINGLE PULSE RθJA = 125oC/W o TA = 25 C 0.01 0.01 0.
PAGE 6
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