Datasheet

February 2004
2004 Fairchild Semiconductor Corporation
FDS6682 Rev D(W)
FDS6682
30V N-Channel PowerTrench

MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Applications
• DC/DC converter
Features
• 14 A, 30 V. R
DS(ON)
= 7.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 9.0 mΩ @ V
GS
= 4.5 V
• Low gate charge (22 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) 14 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6682 FDS6682 13’’ 12mm 2500 units
FDS6682