Datasheet

2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
11 A, 30 V. R
DS(ON)
= 12.5 m @ V
GS
= 10 V
R
DS(ON)
= 17.0 m @ V
GS
= 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous
(Note 1a)
11 A
– Pulsed 50
Power Dissipation for Single Operation
(Note 1a)
2.5
P
D
(Note 1b)
1.0
W
E
AS
Single Pulse Avalanche Energy
(Note 3)
96 mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6690A FDS6690A 13’’ 12mm 2500 units
FDS6
690A
tm
February 2007

Summary of content (6 pages)