Datasheet

FDS6692A N-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A
2
www.fairchildsemi.com1
FDS6692A
N-Channel PowerTrench
®
MOSFET
30V, 9A, 11.5m
Features
R
DS(ON)
= 11.5m, V
GS
= 10V, I
D
= 9A
R
DS(ON)
= 14.5m, V
GS
= 4.5V, I
D
= 8.2A
High performance trench technology for extremely low
R
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
R
DS(ON)
and fast switching speed.
1
7
5
2
8
4
6
3
S
D
S
S
SO-8
D
D
D
G
January 2010

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