Datasheet

©2012 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6699S Rev. D3
FDS6699S 30V N-Channel PowerTrench
®
SyncFET™
FDS6699S
30V N-Channel PowerTrench
®
SyncFET™
Features
■ 21 A, 30 V Max R
DS(ON)
= 3.6 m Ω @ V
GS
= 10 V
Max R
DS(ON)
= 4.5 m Ω @ V
GS
= 4.5 V
■ Includes SyncFET Schottky body diode
■ High performance trench technology for extremely low
R
DS(ON)
and fast switching
■ High power and current handling capability
■ 100% R
G
(Gate Resistance) tested
Applications
■ Synchronous Rectifier for DC/DC Converters –
■ Notebook Vcore low side switch
■ Point of Load low side switch
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
and low gate charge. The
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
30 V
V
GSS
Gate-Source Voltage ± 20 V
I
D
Drain Current – Continuous (Note 1a)
– Pulsed 105
P
D
Power Dissipation for Single Operation (Note 1a)
2.5 W
(Note 1b) 1.2
(Note 1c) 1
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150 ° C
Thermal Characteristics
R
θ JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50 ° C/W
R
θ JC
Thermal Resistance, Junction-to-Case (Note 1) 25
Device Marking Device Reel Size Tape width Quantity
FDS6699S FDS6699S 13’’ 12mm 2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
7
8
4
3
2
1
December 2012
E
AS
Single Pulse Avalanche Energy
541
A
mJ
(Note 4)
3
21
Drain-Source Voltage