Datasheet

November 1998
FDS6875
Dual P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless otherwise noted
Symbol Parameter FDS6875 Units
V
DSS
Drain-Source Voltage -20 V
V
GSS
Gate-Source Voltage ±8 V
I
D
Drain Current - Continuous (Note 1a) -6 A
- Pulsed -20
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
FDS6875 Rev.C
-6 A, -20 V. R
DS(ON)
= 0.030 Ω @ V
GS
= -4.5 V,
R
DS(ON)
= 0.040 Ω @ V
GS
= -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8 SOT-223
SuperSOT
TM
-6
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging and protection circuits.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6875
pin 1
1
5
7
8
2
3
4
6
© 1998 Fairchild Semiconductor Corporation