Datasheet

Electrical Characteristics (T
A
= 25
O
C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA -20 V
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
I
D
= -250 µA, Referenced to 25
o
C
-21
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1 µA
T
J
= 55°C
-10 µA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250 µA -0.4 -0.8 -1.5 V
V
GS(th)
/T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 µA, Referenced to 25
o
C
2.8
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -6 A
0.024 0.03
T
J
=125°C 0.033 0.048
V
GS
= -2.5 V, I
D
= -5.3 A
0.032 0.04
I
D(ON)
On-State Drain Current V
GS
= -4.5 V, V
DS
= -5 V -20 A
g
FS
Forward Transconductance
V
DS
= -4.5 V, I
D
= -6 A
22 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
2250 pF
C
oss
Output Capacitance 500 pF
C
rss
Reverse Transfer Capacitance 200 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DS
= -10 V, I
D
= -1 A
8 16 ns
t
r
Turn - On Rise Time
V
GEN
= -4.5 V, R
GEN
= 6
15 27 ns
t
D(off)
Turn - Off Delay Time 98 135 ns
t
f
Turn - Off Fall Time 35 55 ns
Q
g
Total Gate Charge V
DS
= -10 V, I
D
= -6 A, 23 31 nC
Q
gs
Gate-Source Charge
V
GS
= -5 V
3.9 nC
Q
gd
Gate-Drain Charge 5.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -1.3 A
(Note 2) -0.7 -1.2 V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6875 Rev.C
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.