Datasheet

FDS6890A
FDS6890A Rev. C
FDS6890A
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Features
•
7.5 A, 20 V. R
DS(ON)
= 0.018 Ω @ V
GS
= 4.5 V
R
DS(ON
)
= 0.022 Ω @ V
GS
= 2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON
)
.
• High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
8
V
I
D
Drain Current - Continuous
(Note 1a)
7.5 A
- Pulsed 20
Power Dissipation for Dual Operation 2.0
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
P
D
(Note 1c)
0.9
W
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°
C/W
90
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6890A FDS6890A 13 12mm 2500 units
Applications
• DC/DC converter
• Motor drives
November 1999
1
5
7
8
2
3
4
6
D1
SO-8
D2
D2
D1
S1
S2
G1
G2
pin
1