Datasheet
OCTOBER 2001
2001 Fairchild Semiconductor Corporation
FDS6898A Rev C (W)
FDS6898A
Dual N-Channel Logic Level PWM Optimized PowerTrench
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 9.4 A, 20 V R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 18 mΩ @ V
GS
= 2.5 V
• Low gate charge (16 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1a) 9.4 A
– Pulsed 38
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6898A FDS6898A 13’’ 12mm 2500 units
FDS6898A