Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6900AS, MOSFET

May 2005

FDS6900AS Rev B(X)

FDS6900AS

Dual N-Ch PowerTrench

SyncFET

™

General Description

The FDS6900AS is designed to replace two single SO-

8 MOSFETs and Schottky diode in synchronous DC:DC

power supplies that provide various peripheral voltages

for notebook computers and other battery powered

electronic devices. FDS6900AS contains two unique

30V, N-channel, logic level, PowerTrench MOSFETs

designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild’s monolithic SyncFET technology.

Features

• Q2: Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

8.2A, 30V R

DS(on)

= 22mΩ @ V

= 10V

DS(on)

= 28mΩ @ V

= 4.5V

• Q1: Optimized for low switching losses

Low Gate Charge (11nC typical)

6.9A, 30V R

DS(on)

= 27mΩ @ V

= 10V

DS(on)

= 34mΩ @ V

= 4.5V

• 100% R

(Gate Resistance) Tested

Dual N-Channel SyncFet

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Q2 Q1 Units

DSS

Drain-Source Voltage 30 30 V

GSS

Gate-Source Voltage

±20 ±20

Drain Current - Continuous (Note 1a) 8.2 6.9 A

- Pulsed 30 20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6900AS FDS6900AS 13” 12mm 2500 units

FDS6900AS FDS6900AS_NL (Note 4) 13” 12mm 2500 units

SO-

S1D2

Pin 1

SO-8

FDS6900AS

Summary of content (10 pages)

PAGE 1
FDS6900AS Dual N-Ch PowerTrench® SyncFET™ General Description Features The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
PAGE 2
TA = 25°C unless otherwise noted Symbol Test Conditions Parameter Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS = 0 V, ID = 1 mA ID = 250 uA VGS = 0 V, ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA ID = 250 µA Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 Q2 Q1 1 1 V 27
PAGE 3
Symbol Parameter Switching Characteristics Qg(TOT) Qg Qgs Qgd (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2: VDS = 15 V, ID = 8.2A Q1: VDS = 15 V, ID = 6.9A Gate–Source Charge Gate–Drain Charge 10 11 5.8 6.1 1.6 1.7 2.1 2.2 15 15 8.2 8.
PAGE 4
FDS6900AS Typical Characteristics: Q2 2.4 30 4.0V 6.0V VGS = 3.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 20 3.0V 10 2.5V 0 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 5.0V 1.2 6.0V 10V 1 0.8 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 Figure 1. On-Region Characteristics. 10 15 20 ID, DRAIN CURRENT (A) 25 30 0.06 ID = 8.2A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) ID = 4A 1.4 1.2 1 0.8 0.6 0.05 0.04 o TA = 125 C 0.03 0.
PAGE 5
800 f = 1MHz VGS = 0 V ID =8.2A 8 600 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 Ciss 400 Coss 200 2 Crss 0 0 0 3 6 Qg, GATE CHARGE (nC) 9 0 12 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100µs 1ms 10ms 100ms 10 1s 1 10s DC VGS = 10V SINGLE PULSE o RθJA = 135 C/W 0.1 o TA = 25 C 0.01 0.
PAGE 6
FDS6900AS Typical Characteristics Q1 20 2.2 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 16 ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V 6.0V 4.5V 12 8 3.0V 4 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2.5V 0 0.8 0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 Figure 12. On-Region Characteristics. 16 20 0.07 ID = 6.9A VGS = 10V ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 12 ID, DRAIN CURRENT (A) Figure 13.
PAGE 7
FDS6900AS Typical Characteristics Q1 800 f = 1 MHz VGS = 0 V ID = 6.9A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 600 Ciss 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 0 12 Figure 18. Gate Charge Characteristics. 30 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 19. Capacitance Characteristics.
PAGE 8
FDS6900AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) Current: 1.6A/DIV Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET.
PAGE 9
FDS6900AS Typical Characteristics L VDS BVDSS tP VGS RGE + DUT VGS VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 26. Unclamped Inductive Load Test Circuit Figure 27. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit VDS tON td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VGS RGEN Figure 29.
PAGE 10
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