Datasheet

September 2004
2004 Fairchild Semiconductor Corporation
FDS6910 Rev BW)
FDS6910
Dual N-Channel Logic Level PowerTrench



MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 7.5 A, 30 V. R
DS(ON)
= 13 mΩ @ V
GS
= 10 V
R
DS(ON)
= 17 mΩ @ V
GS
= 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 20
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1.0
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6910 FDS6910 13’’ 12mm 2500 units
FDS6910