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FDS6911 Rev C1

FDS6911

Dual N-Channel Logic Level PowerTrench

MOSFET

20V, 7.5A, 13mΩ

General Description

These N-Channel Logic Level MOSFETs are produced

using Fairchild Semiconductor’s advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

 r

DS(on)

= 13 mΩ @ V

= 10 V

DS(on)

= 17 mΩ @ V

= 4.5 V

 Fast switching speed

 Low gate charge

 High performance trench technology for extremely

low R

DS(ON)

 High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

± 20

Drain Current – Continuous (Note 1a) 7.5 A

– Pulsed 20

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

1.0

(Note 1c)

0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6911 FDS6911 13’’ 12mm 2500 units

S69

11 D

l N-

l L

l P

rTr

FET

December 2011

Summary of content (6 pages)

PAGE 1
FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13mΩ General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Source Leakage On Characteristics ID = 250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C 20 V 28 mV/°C 1 10 μA ±100 nA 1.8 –4.7 3 V mV/°C 10.6 13 14.
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A IF = 7.5 A, diF/dt = 100 A/µs (Note 2) 1.3 A 1.2 V 24 nS 13 nC Notes: 1.
PAGE 4
20 2.6 VGS = 10.0V rDS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 16 4.0V 4.5V 3.0V 12 8 4 VGS = 3.0V 2.2 1.8 3.5V 1.4 4.5V 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.25 1.5 0 Figure 1. On-Region Characteristics. 6.0V 10.0V 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.04 ID = 7.5A VGS = 10V ID = 3.
PAGE 5
1400 f = 1MHz VGS = 0 V ID = 7.5A 1200 8 Ciss VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1000 800 600 Coss 400 2 200 Crss 0 0 0 4 8 12 Qg, GATE CHARGE (nC) 16 0 20 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 100μs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 5 10 1ms 10ms 100ms 1s 1 10s DC 0.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.