Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6912, MOSFET

July 2000



2000 Fairchild Semiconductor Corporation

FDS6912 Rev F (W)

FDS6912

Dual N-Channel Logic Level PWM Optimized PowerTrench







MOSFET

General Description

These N-Channel Logic Level MOSFETs have been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

•

6 A, 30 V. R

DS(ON)

= 0.028

Ω

@ V

= 10 V

DS(ON)

= 0.042

Ω

@ V

= 4.5 V.

•

Optimized for use in switching DC/DC converters

with PWM controllers

•

Very fast switching.

•

Low gate charge

SO-8

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

Drain Current – Continuous

(Note 1a)

– Pulsed 20

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

(Note 1c)

0.9

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6912 FDS6912 13’’ 12mm 2500 units

FDS6912

Summary of content (5 pages)

PAGE 1
FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C 30 Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse On Characteristics V 20 mV/°C µA VGS = 25 V, VGS = 0 V TJ = 55°C VDS = 0 V 1 10 100 nA VGS = –25 V VDS = 0 V –100 nA 2
PAGE 3
FDS6912 Typical Characteristics 30 VGS = 10V 2 6.0V 5.0V 4.5V 1.8 V GS = 4.0V 1.6 18 4.5V 1.4 4.0V 5.0V 12 1.2 3.5V 10V 1 6 3.0V 0.8 0 0 0 1 1 2 2 V DS, D RAIN-SOUR CE VOLTAGE (V) 3 20 30 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 8 I = 3.0A ID = 6.3A V GS =10V D 7 R DS(ON) ,(OHM) 1.4 1.3 1.2 1.1 1.0 0.9 DRAIN-SOURCE ON-RESISTANCE 1.5 6 5 o TA = 125 C 4 3 0.8 2 25 oC 0.7 0.
PAGE 4
FDS6912 Typical Characteristics (continued) 2000 10 ID = 6.3A VDS = 5V 10V CAPACITANCE (pF) 8 15V 6 4 2 500 C oss 200 80 0 0 4 8 12 C iss 1000 16 f = 1 MHz VGS = 0V 0.1 0.3 Figure 7. Gate Charge Characteristics. 100 us IT LIM 30 1s DS ms 10 s DC VGS = 10V SINGLE PULSE RθJA = 135 °C/W TA = 25°C 0.5 V 20 s POWER (W) 100 0.2 SINGLE PULSE R θJA= 135°C/W TA = 25° 25 1m s 0.5 15 10 5 1 2 5 10 , DRAIN-SOURCE VOLTAGE (V) 20 0 0.01 Figure 9. Maximum Safe Operating Area.
PAGE 5
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