Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6930B, MOSFET

March 2010

FDS6930B Rev. A1

FDS6930B Dual N-Channel Logic Level PowerTrench

MOSFET

FDS6930B

Dual N-Channel Logic Level PowerTrench

MOSFET

Features

■ 5.5 A, 30 V. R

DS(ON)

= 38 m

Ω @ V

= 10 V

DS(ON)

= 50 m

Ω @ V

= 4.5 V

■ Fast switching speed

■ Low gate charge

■ High performance trench technology for extremely

low R

DS(ON)

■ High power and current handling capability

General Description

These N-Channel Logic Level MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and yet maintain superior switching performance.

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss and fast switch-

ing are required.

Absolute Maximum Ratings

= 25°C unless otherwise noted

Package Marking and Ordering Information

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

± 20 V

Drain Current – Continuous (Note 1a) 5.5 A

– Pulsed 20

Power Dissipation for Dual Operation (Note 1) 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to 150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40

°C/W

Device Marking Device Reel Size Tape width Quantity

FDS6930B FDS6930B 13" 12mm 2500 units

Pin 1

SO-8

Summary of content (5 pages)

PAGE 1
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Features General Description ■ 5.5 A, 30 V. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefﬁcient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C IGSS Gate–Source Leakage VGS = ±20 V, VDS = 0 V On Characteristics 30 V mV/°C 26 1 10 µA ±100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ G
PAGE 3
20 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V VGS = 10V ID, DRAIN CURRENT (A) 16 4.5V 6.0V 3.5V 12 8 3.0V 4 0 1.8 VGS = 3.5V 1.6 1.4 4.0V 4.5V 5.0V 1.2 6.0V 10.0V 1 0.8 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 16 20 0.12 ID = 5.5A VGS = 10.0V ID = 2.75A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 12 ID, DRAIN CURRENT (A) Figure 2.
PAGE 4
500 10 f = 1 MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 400 VDS = 5V CAPACITANCE (pF) 8 15V 6 10V 4 300 Ciss 200 Coss 2 100 0 0 Crss 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 0 6 Figure 7. Gate Charge Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 20 Figure 8. Capacitance Characteristics. 100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 10s DC VGS = 10.0V SINGLE PULSE RθJA = 135°C/W 0.1 TA = 25°C 0.01 0.01 0.
PAGE 5
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