Datasheet

April 1999
FDS6961A
Dual N-Channel Logic Level PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless other wise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current - Continuous (Note 1a) 3.5 A
- Pulsed 14
P
D
Power Dissipation for Single Operation (Note 1) 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
FDS6961A Rev.C
3.5 A, 30 V. R
DS(ON)
= 0.090 Ω @ V
GS
= 10 V
R
DS(ON)
= 0.140 Ω @ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8 SOT-223SuperSOT
TM
-6
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6961A
pin
1
1
5
7
8
2
3
4
6
© 1999 Fairchild Semiconductor Corporation