Datasheet
©2008 Fairchild Semiconductor Corporation
FDS6982AS Rev B1
FDS6982AS
Dual Notebook Power Supply N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6982AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET
technology.
Applications
• Notebook
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A, 30V R
DS(on)
max= 13.5mΩ @ V
GS
= 10V
R
DS(on)
max= 16.5mΩ @ V
GS
= 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V R
DS(on)
max= 28.0mΩ @ V
GS
= 10V
R
DS(on)
max= 35.0mΩ @ V
GS
= 4.5V
• Low gate charge (11nC typical)
S2
SO-8
G2
S1
G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Q2 Q1 Units
V
DSS
Drain-Source Voltage 30 30 V
V
GSS
Gate-Source Voltage
±20 ±20
V
I
D
Drain Current - Continuous (Note 1a) 8.6 6.3 A
- Pulsed 30 20
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6982AS FDS6982AS 13” 12mm 2500 units
FDS6982AS
tmM
May 2008