Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS6990AS, MOSFET

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FDS6990AS Rev. A2

FDS6990AS Dual 30V N-Channel PowerTrench

SyncFET™

FDS6990AS

Dual 30V N

Channel PowerTrench

SyncFET™

Features

■

7.5 A, 30 V. R

DS(ON)

= 22 m

Ω

@ V

= 10 V

DS(ON)

= 28 m

Ω

@ V

= 4.5 V

■

Includes SyncFET Schottky diode

■

Low gate charge (10nC typical)

■

High performance trench technology for extremely low

DS(ON)

■

High power and current handling capability

Applications

■

DC/DC converter

■

Motor drives

General Description

The FDS6990AS is designed to replace a dual SO-8 MOSFET

and two Schottky diodes in synchronous DC:DC power sup-

plies. This 30V MOSFET is designed to maximize power con-

version efﬁciency, providing a low R

DS(ON)

and low gate charge.

Each MOSFET includes integrated Schottky diodes using Fair-

child’s monolithic SyncFET technology. The performance of the

FDS6990AS as the low-side switch in a synchronous rectiﬁer is

similar to the performance of the FDS6990A in parallel with a

Schottky diode.

Absolute Maximum Ratings

=25°C unless otherwise noted

Package Marking and Ordering Information

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

20 V

Drain Current – Continuous (Note 1a) 7.5 A

– Pulsed 20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

C/W

Thermal Resistance, Junction-to-Case (Note 1) 40

C/W

Device Marking Device Reel Size Tape width Quantity

FDS6990AS FDS6990AS 13" 12mm 2500 units

Pin 1

SO-8

March 2010

Summary of content (8 pages)

PAGE 1
March 2010 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Features General Description ■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V mV/°C 31 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.
PAGE 3
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3.
PAGE 4
2 20 3.5V I D, DRAIN CURRENT (A) 4.5V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.0V 15 3.0V 10 5 2.5V 0 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0.8 0 0.5 1 1.5 2 0 4 8 12 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.07 I D = 7.5A VGS = 10V I D = 3.75A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 Figure 2.
PAGE 5
10 1000 8 Ciss VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) I D =7.5A 20V 6 15V 4 2 100 Coss Crss f = 1 MHz VGS = 0 V 20 0.1 0 0 2 4 6 8 10 12 1 10 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
PAGE 6
SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990AS. 0.4A/Div I DSS, REVERSE LEAKAGE CURRENT (A) 0.1 0.
PAGE 7
L VDS BVDSS tP VGS RGE VDS + DUT IAS VDD VGS VDD – 0V IAS tp vary tP to obtain required peak IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Drain Current Same type as DUT + 50k 10V - 10 F + 1 F VDD QG(TOT) – VGS 10V DUT QGD QGS VGS Ig(REF) Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18.
PAGE 8
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