Datasheet

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FDS8433A

FDS8433A Rev. C

FDS8433A

Single P-Channel 2.5V Specified MOSFET

General Description

This P-Channel enhancement mode power field effect

transistors is produced using Fairchild’s proprietary,

high cell density, DMOS technology. This very high

density processis especially tailored to minimize

on-state resistance and provide superior switching

performance.

Applications

• Load switch

• DC/DC converter

• Battery protection

September 2000

Features

• -5 A, -20 V. R

DS(on)

= 0.047 Ω @ V

= -4.5 V

DS(on)

= 0.070 Ω @ V

= -2.5 V

• Fast switching speed.

• High density cell design for extremely low R

DS(on)

• High power and current handling capability.

2000 Fairchild Semiconductor International

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter FDS8433A Units

DSS

Drain-Source Voltage -20 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

-5 A

- Pulsed -50

Power Dissipation for Single Operation

(Note 1a)

2.5 W

(Note 1b)

1.2

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS8433A FDS8433A 13’’ 12mm 2500 units

SO-8

Summary of content (5 pages)

PAGE 1
FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • Fast switching speed.
PAGE 2
Symbol Parameter Off Characteristics TA = 25°C unless otherwise noted Test Conditions Min VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C -20 Typ Max Units V BVDSS Drain-Source Breakdown Voltage BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V On Characteristics m
PAGE 3
FDS8433A Typical Characteristics 2 VGS = -4.5V -3.5V 40 30 R DS(on) , NORMALIZ ED -3.0V -2.5V 20 -2.0V 10 -1.5V DRAIN-SOURCE ON-RESISTANCE - I D , DRAIN-SOURCE CURRENT (A) 50 1.8 VGS = -2 .0 V 1.6 -2 .5 V 1.4 -3 .0 V 1 0.8 0 0 1 2 3 4 -3 .5 V -4 .0 V -4 .5 V 1.2 5 0 10 20 Figure 1. On-Region Characteristics. 1.4 R D S(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 0.15 ID = -5A VGS = -4.5V 1.2 1 0.8 0.
PAGE 4
(continued) 5 3000 -VGS , GATE-SOURCE VOLTAGE (V) I D =-5.0A 2000 VDS = -5V 4 Ciss 1000 CAPACITANCE (pF) -10V -15V 3 2 200 Crss 100 0 4 8 12 Q g , GATE CHARGE (nC) 16 f = 1 MHz V GS = 0 V 50 0.1 20 Figure 7. Gate-Charge Characteristics. 0.2 0.5 1 2 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 8. Capacitance Characteristics. 100 50 100 IT LIM N) S(O RD 10 1m s V GS = -4.5V SINGLE PULSE R θJA = 125°C/W T A = 25°C 0.1 0.01 0.1 0.
PAGE 5
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