Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS8447, MOSFET

November 2006

FDS8447 Single N-Channel PowerTrench

MOSFET

FDS8447 Rev. B

www.fairchildsemi.com1

FDS8447

Single N-Channel PowerTrench

MOSFET

40V, 12.8A, 10.5mΩ

Features

 Max r

DS(on)

= 10.5mΩ at V

= 10V, I

= 12.8A

 Max r

DS(on)

= 12.3mΩ at V

= 4.5V, I

= 11.4A

 Low gate charge

 High performance trench technology for extremely low

DS(on)

 High power and current handling capability

 RoHS compliant

General Description

This single N-Channel MOSFET is produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain superior switching

performance.

Applications

 DC - DC conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 12.8

-Pulsed 50

Drain-Source Avalanche Energy (Note 3) 150 mJ

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b) 1

, T

STG

Operating and Storage Junction Temperature Range -55 to 150 °C

θJA

Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction to Case (Note 1) 25

Device Marking Device Reel Size Tape Width Quantity

FDS8447 FDS8447 13’’ 12mm 2500 units

Pin 1

SO-8

Summary of content (6 pages)

PAGE 1
FDS8447 Single N-Channel PowerTrench® MOSFET tm 40V, 12.8A, 10.5mΩ Features General Description Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 40 ID = 250µA, referenced to 25°C V mV/°C 34 VDS = 32V, VGS = 0V TJ = 55°C VGS = ±20V, VDS = 0V 1 µA 10 µA ±100 nA 3 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ
PAGE 3
50 3.0 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS =10V VGS = 4.5V 30 VGS = 3.5V 20 VGS = 3V 10 0 0.0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature 0.5 0 10 20 30 ID, DRAIN CURRENT(A) 40 50 ID = 12.8A PULSE DURATION = 80µs DUTY CYCLE = 0.
PAGE 4
10 VDD = 10V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4 10 VDD = 20V 6 VDD = 30V 4 2 0 3 10 Coss 2 10 f = 1MHz VGS = 0V 1 0 10 20 30 Qg, GATE CHARGE(nC) 10 0.1 40 Figure 7. Gate Charge Characteristics 15 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 16 13 TJ = 25oC 10 7 TJ = 125oC 4 12 VGS = 10V 9 VGS = 4.5V 6 3 o RθJA = 50 C/W 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P(PK) 0.01 t1 t2 1E-3 SINGLE PULSE RθJA(t) = r(t)*RθJA RθJA = 125oC/W TJ-TA =P*RθJA DUTY FACTOR: D = t1/t2 0.0002 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDS8447 Rev.B 5 www.fairchildsemi.
PAGE 6
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