Datasheet

December 2005
©2005 Fairchild Semiconductor Corporation
FDS8449 Rev B(W)
www.fairchildsemi.com
FDS8449
40V N-Channel PowerTrench
®
MOSFET
General Description
These N-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Inverter
Power Supplies
Features
7.6 A, 40V R
DS(on)
= 29mΩ @ V
GS
= 10V
R
DS(on)
= 36mΩ @ V
GS
= 4.5V
High power handling capability in a widely used
surface mount package
RoHS compliant
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 40 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) 7.6 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
P
D
(Note 1b)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 125
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS8449 FDS8449 13’’ 12mm 2500 units
FD
S8
44
9
4
0
V N-
C
h
a
nn
e
l P
o
w
e
rTr
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n
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®
M
OS
FET

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