Datasheet

FDS86106 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDS86106 Rev. C2
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 100 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 67 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 80 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 2 2.9 4 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -9 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 3.4 A 83 105
mΩV
GS
= 6 V, I
D
= 2.7 A 115 171
V
GS
= 10 V, I
D
= 3.4 A, T
J
= 125 °C 143 177
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 3.4 A 6 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
156 208 pF
C
oss
Output Capacitance 47 62 pF
C
rss
Reverse Transfer Capacitance 2 3 pF
R
g
Gate Resistance 0.9 Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 50 V, I
D
= 3.4 A,
V
GS
= 10 V, R
GEN
= 6 Ω
5 10 ns
t
r
Rise Time 2 10 ns
t
d(off)
Turn-Off Delay Time 8 15 ns
t
f
Fall Time 2 10 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 50 V
I
D
= 3.4 A
3 4 nC
Total Gate Charge V
GS
= 0 V to 5 V 1.6 2.3 nC
Q
gs
Total Gate Charge 0.8 nC
Q
gd
Gate to Drain “Miller” Charge 0.8 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.4 A (Note 2) 0.86 1.3
V
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.83 1.2
t
rr
Reverse Recovery Time
I
F
= 3.4 A, di/dt = 100 A/μs
34 54
ns
Q
rr
Reverse Recovery Charge 22 35 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T
J
= 25
o
C; N-ch: L = 3 mH, I
AS
= 3 A, V
DD
= 100 V, V
GS
= 10 V.
a) 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.