Datasheet

FDS86106 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
3
©2011 Fairchild Semiconductor Corporation
FDS86106 Rev. C2
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
012345
0
3
6
9
12
15
V
GS
= 7 V
V
GS
= 5.5 V
V
GS
= 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
V
GS
= 6 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
03691215
0
1
2
3
4
5
V
GS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
V
GS
= 7 V
V
GS
= 5.5 V
V
GS
= 10 V
N o rmali z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N or m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 3.4 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
45678910
0
100
200
300
400
500
T
J
= 125
o
C
I
D
= 3.4 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
246810
0
3
6
9
12
15
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
20
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current