Datasheet

FDS86106 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
4
©2011 Fairchild Semiconductor Corporation
FDS86106 Rev. C2
Figure 7.
01234
0
2
4
6
8
10
I
D
= 3.4 A
V
DD
= 50 V
V
DD
= 25 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 75 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
300
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 2
1
2
3
4
T
J
= 100
o
C
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
1
2
3
4
V
GS
= 6 V
R
θJA
= 50
o
C/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
A
, Ambient TEMPERATURE (
o
C)
Ma x i m u m Co nt i nu ou s D r a i n
C u r r e n t v s A mb i e n t T e m p e r a t u r e
Figure 11.
0.01 0.1 1 10 100 600
0.01
0.1
1
10
30
10 s
100us
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Forward Bias Safe
Operating Area
Figure 12.
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
400
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25 °C unless otherwise noted