Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS86140, MOSFET

March 2011

FDS86140 Rev.C

www.fairchildsemi.com

FDS86140 N-Channel PowerTrench

MOSFET

FDS86140

N-Channel PowerTrench

MOSFET

100 V, 11.2 A, 9.8 mΩ

Features

 Max r

DS(on)

= 9.8 mΩ at V

= 10 V, I

= 11.2 A

 Max r

DS(on)

= 16 mΩ at V

= 6 V, I

= 9 A

 High performance trench technologh for extremely low r

DS(on)

 High power and current handing capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for

DS(on)

, switching performance and

ruggedness

Applications

 DC/DC Converters and Off-Line UPS

 Distributed Power Architectures and VRMs

 Primary Swith for 24 V and 48 V Systems

 High Voltage Synchronous Rectifier

SO-8

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 11.2

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 264 mJ

Power Dissipation T

= 25 °C (Note 1) 5.0

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS86140 FDS86140 SO-8 13’’ 12

mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 70 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
50 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 7 V 40 VGS = 6 V VGS = 5 V 30 20 VGS = 4.5V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5 V 3 VGS = 5 V 2 1 0 4 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 50 ID = 11.2 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
5000 ID = 11.2 A VDD = 50 V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 1000 Coss 100 2 f = 1 MHz VGS = 0 V 0 0 6 12 18 24 30 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 20 12 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC TJ = 100 oC TJ = 125 oC 9 VGS = 10 V 6 VGS = 6 V 3 o RθJA = 50 C/W 1 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDS86140 Rev.C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.