Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS86141, MOSFET

August 2011

FDS86141 • Rev. C4

www.fairchildsemi.com

FDS86141 — N-Channel PowerTrench

MOSFET

FDS86141

N-Channel PowerTrench

MOSFET

100 V, 7 A, 23 m

Features

 Maximum R

DS(on)

= 23 m at V

= 10 V, I

= 7 A

 Maximum R

DS(on)

= 36 m at V

= 6 V, I

= 5.5 A



High-Performance Trench Technology; Extremely Low R

DS(on)

 100% UIL Tested

 RoHS Compliant

General Description

This N-channel MOSFET is produced using Fairchild

Semiconductor‘s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance and

maintain superior switching performance.

Applications

 DC-DC Conversion

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 7

-Pulsed 30

Single Pulse Avalanche Energy (Note 3) 121 mJ

Power Dissipation T

= 25 °C (Note 1a) 5.0

Power Dissipation T

= 25 °C (Note 1b) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

JC

Thermal Resistance, Junction to Case (Note 1) 2.5

°C/W

JA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS86141 FDS86141 SO-8 13 ’’ 12 mm 2500 units

SO-8

Pin 1

Summary of content (7 pages)

PAGE 1
FDS86141 N-Channel PowerTrench® MOSFET 100 V, 7 A, 23 m Features General Description  Maximum RDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and maintain superior switching performance.  Maximum RDS(on) = 36 m at VGS = 6 V, ID = 5.
PAGE 2
Symbol Parameter Test Conditions Min. Typ. Max.
PAGE 3
0 4 ID, DRAIN CURRENT (A) 25 VGS = 7 V VGS = 10 V 20 15 VGS = 5.5 V 10 VGS = 5 V 5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V 3 VGS = 6 V 2 VGS = 7 V 1 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 5 10 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 25 30 80 ID = 7 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.
PAGE 4
1000 ID = 7 A VDD = 50 V Ciss 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0 0 3 6 9 12 5 0.1 15 Figure 7. Gate Charge Characteristics 100 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs. Drain-to-Source Voltage 20 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 6 VGS = 10 V 4 VGS = 6 V 2 o RJA = 50 C/W 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve © 2007 Fairchild Semiconductor Corporation FDS86141 • Rev. C4 5 www.fairchildsemi.
PAGE 6
5.00 4.80 A 0.65 3.81 8 5 B 1.75 6.20 5.80 PIN ONE INDICATOR 4.00 3.80 1 5.60 4 1.27 (0.33) 1.27 0.25 C B A LAND PATTERN RECOMMENDATION SEE DETAIL A 0.25 0.10 0.25 0.19 C 1.75 MAX 0.51 0.33 0.10 C OPTION A - BEVEL EDGE 0.50 x 45° 0.25 R0.10 GAGE PLANE R0.10 OPTION B - NO BEVEL EDGE 0.36 NOTES: UNLESS OTHERWISE SPECIFIED 8° 0° 0.90 0.40 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS.
PAGE 7
FDS86141 — N-Channel PowerTrench® MOSFET © 2007 Fairchild Semiconductor Corporation FDS86141 • Rev. C4 7 www.fairchildsemi.