Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS86240, MOSFET

June 2010

FDS86240 Rev.C

www.fairchildsemi.com

FDS86240 N-Channel PowerTrench

MOSFET

FDS86240

N-Channel PowerTrench

MOSFET

150 V, 7.5 A, 19.8 mΩ

Features

 Max r

DS(on)

= 19.8 mΩ at V

= 10 V, I

= 7.5 A

 Max r

DS(on)

= 26 mΩ at V

= 6 V, I

= 6.4 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for r

DS(on)

, switching performance and

ruggedness

Applications

 DC/DC converters and Off-Line UPS

 Distributed Power Architectures and VRMs

 Primary Switch for 24 V and 48 V Systems

 High Voltage Synchronous Rectifier

SO-8

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 7.5

-Pulsed 30

Single Pulse Avalanche Energy (Note 3) 220 mJ

Power Dissipation T

= 25 °C (Note 1) 5.0

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS86240 FDS86240 SO-8 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS86240 N-Channel PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance trench technology for extremely low rDS(on) ruggedness.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 105 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Sour
PAGE 3
0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 5 V ID, DRAIN CURRENT (A) 25 VGS = 10 V VGS = 6 V 20 VGS = 5.5 V 15 10 VGS = 4.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 4.5 V 2.5 VGS = 5 V 2.0 1.5 VGS = 5.5 V 1.0 0.5 2.0 2.5 3.0 0 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 30 80 ID = 7.5 A rDS(on), DRAIN TO 2.0 V = 10 V GS 1.8 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 ID = 7.5 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V VDD = 50 V 6 VDD = 75 V 4 10 0 5 10 15 20 25 f = 1 MHz VGS = 0 V 1 0.1 30 Figure 7. Gate Charge Characteristics 1 10 100 Figure 8. Capacitance vs Drain to Source Voltage 8 30 ID, DRAIN CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 6 VGS = 6 V 4 2 o RθJA = 50 C/W 1 0.01 0.1 1 10 0 25 100 50 125 150 Figure 10.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDS86240 Rev.C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.